Bibliographic Details
| Title: |
Current-induced magnetization switching in epitaxial L10-FePt/Cr heterostructures through orbital Hall effect. |
| Authors: |
Lyu, H. C., Zhao, Y. C., Qi, J., Yang, G., Qin, W. D., Shao, B. K., Zhang, Y., Hu, C. Q., Wang, K., Zhang, Q. Q., Zhang, J. Y., Zhu, T., Long, Y. W., Wei, H. X., Shen, B. G., Wang, S. G. |
| Source: |
Journal of Applied Physics; 7/7/2022, Vol. 132 Issue 1, p1-8, 8p |
| Subject Terms: |
HALL effect, HETEROSTRUCTURES, PERPENDICULAR magnetic anisotropy, MOLECULAR beam epitaxy, MAGNETIZATION, SPIN-orbit coupling, MAGNETIC anisotropy |
| Geographic Terms: |
SCHWABISCH Hall (Germany) |
| Abstract: |
The current-induced magnetization switching (CIMS) was successfully observed in epitaxial L10-FePt/CrxPt1−x (0 ≤ x ≤ 1) heterostructures grown by molecular beam epitaxy with large perpendicular magnetic anisotropy. With increasing Cr content, the critical switching current density (Jc) in FePt/CrxPt1−x heterostructures exhibited a decreasing trend, where it was greatly reduced by 69% in FePt/Cr (3d) films compared to FePt/Pt (5d) films with strong spin–orbit coupling. Furthermore, the same switching polarities were observed for all FePt/CrxPt1−x samples, indicating that the orbital Hall effect played a dominant role in CIMS for FePt/Cr films because of opposite spin Hall angles for Cr and Pt. Our results will put forward the applications of L10-FePt in collaboration with the orbital Hall effect from 3d metals in current-controlled magnetic random access memory and neuromorphic computing. [ABSTRACT FROM AUTHOR] |
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| Database: |
Complementary Index |