Bibliographic Details
| Title: |
Arsenic incorporation into InGaAsP grown by low-pressure metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine in N[sub 2] ambient. |
| Authors: |
Huang, G.S., Tang, X.H., Zhang, B.L., Swee Chuan Tjin |
| Source: |
Journal of Applied Physics; 10/15/2003, Vol. 94 Issue 8, p4890, 6p, 1 Diagram, 6 Graphs |
| Subject Terms: |
ARSENIC, INDIUM compounds, EPITAXY |
| Abstract: |
In[sub x]Ga[sub 1-x]As[sub y]P[sub 1-y] epilayers have been grown by low-pressure metalorganic vapor phase epitaxy (LPMOVPE) using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) as group V precursors and nitrogen as the carrier gas. Arsenic incorporation into In[sub x]Ga[sub 1-x]As[sub y]P[sub 1-y] films grown by LPMOVPE as a function of the gas phase composition ratio and V/III ratio has been systematically studied. With optimized growth conditions, the arsenic composition of the epilayers does not change linearly with the TBA source flow. It is observed that the arsenic incorporation becomes saturated when the gas phase composition TBA/(TBA+TBP) increases to 0.4. The incorporation kinetics in MOVPE growth of In[sub x]Ga[sub 1-x]As[sub y]P[sub 1-y] alloy has been analyzed by using an adsorption-trapping model. The As composition (y) of the In[sub x]Ga[sub 1-x]As[sub y]P[sub 1-y] films varies with the TBA gas phase composition ξ=TBA/(TBA+TBP) according to the expression y=2N[sub s][sup *]/aN[sup 0](1-e[sup -θβξ]). It is demonstrated that with the optimized growth conditions, TBA has a higher incorporation efficiency than TBP in MOVPE growth of In[sub x]Ga[sub 1-x]As[sub y]P[sub 1-y] films. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
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| Database: |
Complementary Index |