Search Results - "MOLECULAR beam epitaxy"

1

Academic Journal

Passivation capping of InAs surface quantum dots by TMA/Al2O3: PL enhancement and blueshift suppression.

Authors: Mohammadi, Hanif, Roca, Ronel C., Zhang, Yuwei, Lee, Hyunju, Ohshita, Yoshio, Iwata, Naotaka, Kamiya, Itaru

Source: Journal of Applied Physics; May2023, Vol. 133 Issue 18, p1-11, 11p

Subject Terms: QUANTUM dots, GALLIUM arsenide, PASSIVATION, MOLECULAR beam epitaxy, ATOMIC layer deposition, X-ray photoelectron spectroscopy

2

Academic Journal

Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate.

Authors: Elwaradi, Reda, Mehta, Jash, Ngo, Thi Huong, Nemoz, Maud, Bougerol, Catherine, Medjdoub, Farid, Cordier, Yvon

Source: Journal of Applied Physics; 4/14/2023, Vol. 133 Issue 14, p1-12, 12p

Subject Terms: MODULATION-doped field-effect transistors, BREAKDOWN voltage, GALLIUM nitride, MOLECULAR beam epitaxy, ATOMIC force microscopy, MATERIALS analysis, ALUMINUM construction

3

Academic Journal

Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy.

Authors: Dhingra, Pankul, Muhowski, Aaron J., Li, Brian D., Sun, Yukun, Hool, Ryan D., Wasserman, Daniel, Lee, Minjoo Larry

Source: Journal of Applied Physics; 3/14/2023, Vol. 133 Issue 10, p1-9, 9p

Subject Terms: QUANTUM well lasers, MOLECULAR beam epitaxy, MOLECULAR gas lasers, QUANTUM dots, QUANTUM wells, OPTICAL properties

4

Academic Journal

Sputter-grown c-axis-oriented PdCoO2 thin films.

Authors: Harada, T., Nagai, T., Oishi, M., Masahiro, Y.

Source: Journal of Applied Physics; 2/28/2023, Vol. 133 Issue 8, p1-6, 6p

Subject Terms: THIN films, SCANNING transmission electron microscopy, MOLECULAR beam epitaxy, PULSED laser deposition, THIN film deposition

5

Academic Journal

Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy.

Authors: Egbo, Kingsley, Luna, Esperanza, Lähnemann, Jonas, Hoffmann, Georg, Trampert, Achim, Grümbel, Jona, Kluth, Elias, Feneberg, Martin, Goldhahn, Rüdiger, Bierwagen, Oliver

Source: Journal of Applied Physics; 1/28/2023, Vol. 133 Issue 4, p1-10, 10p

Subject Terms: MOLECULAR beam epitaxy, METAL oxide semiconductor field-effect transistors, THIN films, FIELD-effect transistors, NEUTRON reflectometry, HOLE mobility, LOW temperatures

6

Academic Journal

Depth profiling of AlN and AlxGa1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source.

Authors: Romanyuk, O., Brault, J., Gordeev, I., Ukraintsev, E., Houdková, J., Jiříček, P.

Source: Journal of Applied Physics; 1/21/2023, Vol. 133 Issue 3, p1-13, 13p

Subject Terms: COMPLEX ions, ION sources, DEPTH profiling, MOLECULAR beam epitaxy, ION energy, X-ray photoelectron spectroscopy

7

Academic Journal

Self-regulating plasma-assisted growth of epitaxial BaBiO3 thin-film on SrTiO3-buffered Si(001) substrate.

Authors: Ahmed, I., De Gendt, S., Merckling, C.

Source: Journal of Applied Physics; 12/14/2022, Vol. 132 Issue 22, p1-7, 7p

Subject Terms: MOLECULAR beam epitaxy, REACTIVE oxygen species, BUFFER layers, SUPERCONDUCTIVITY, DOPING agents (Chemistry), EPITAXY

8

Academic Journal

Role of twin defects on growth dynamics and size distribution of undoped and Si-doped GaAs nanowires by selective area epitaxy.

Authors: Ruhstorfer, Daniel, Döblinger, Markus, Riedl, Hubert, Finley, Jonathan J., Koblmüller, Gregor

Source: Journal of Applied Physics; 11/28/2022, Vol. 132 Issue 20, p1-11, 11p

Subject Terms: SEMICONDUCTOR nanowires, NANOWIRES, SCANNING transmission electron microscopy, MOLECULAR beam epitaxy, MONTE Carlo method, AUDITING standards, EPITAXY

9

Academic Journal

Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer.

Authors: Karg, A., Kracht, M., Vogt, P., Messow, A., Braud, N., Schörmann, J., Rohnke, M., Janek, J., Falta, J., Eickhoff, M.

Source: Journal of Applied Physics; 11/21/2022, Vol. 132 Issue 19, p1-9, 9p

Subject Terms: MOLECULAR beam epitaxy, EPITAXY, CHEMICAL properties, TIN

10

Academic Journal

Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A.

Authors: Riedl, Thomas, Kunnathully, Vinay S., Verma, Akshay K., Langer, Timo, Reuter, Dirk, Büker, Björn, Hütten, Andreas, Lindner, Jörg K. N.

Source: Journal of Applied Physics; 11/14/2022, Vol. 132 Issue 18, p1-9, 9p

Subject Terms: MOLECULAR beam epitaxy, SCANNING transmission electron microscopy, AUDITING standards, SPHALERITE, GALLIUM arsenide, NANOSTRUCTURES

11

Academic Journal

Overcoming metal-rich surface chemistry limitations of ScAlN for high electrical performance heterostructures.

Authors: Engel, Zachary, Motoki, Keisuke, Matthews, Christopher M., Doolittle, W. Alan

Source: Journal of Applied Physics; 11/14/2022, Vol. 132 Issue 18, p1-9, 9p

Subject Terms: SURFACE chemistry, MOLECULAR beam epitaxy, METALLIC films, MODULATION-doped field-effect transistors, CATALYSIS, HETEROSTRUCTURES

12

Academic Journal

Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy.

Authors: Pantle, Florian, Karlinger, Monika, Wörle, Simon, Becker, Fabian, Höldrich, Theresa, Sirotti, Elise, Kraut, Max, Stutzmann, Martin

Source: Journal of Applied Physics; 11/14/2022, Vol. 132 Issue 18, p1-11, 11p

Subject Terms: MOLECULAR beam epitaxy, SEMICONDUCTOR nanowires, NANOWIRES, GALLIUM nitride, CRYSTALS, PHOTOLUMINESCENCE measurement, CRYSTAL surfaces

13

Academic Journal

Hybridization and deconfinement in colloidal quantum dot molecules.

Authors: Verbitsky, Lior, Jasrasaria, Dipti, Banin, Uri, Rabani, Eran

Source: Journal of Chemical Physics; 10/7/2022, Vol. 157 Issue 13, p1-6, 6p

Subject Terms: SEMICONDUCTOR nanocrystals, QUANTUM dots, BETHE-Salpeter equation, MOLECULAR beam epitaxy, MOLECULES, BINDING energy, RESONANT tunneling

14

Academic Journal

Dependence of the radiative lifetime on the type-II band offset in GaAsxSb1−x/GaAs quantum dots including effects of photoexcited carriers.

Authors: Oteki, Yusuke, Shoji, Yasushi, Miyashita, Naoya, Okada, Yoshitaka

Source: Journal of Applied Physics; 10/7/2022, Vol. 132 Issue 13, p1-10, 10p

Subject Terms: MOLECULAR beam epitaxy, PHOTOLUMINESCENCE measurement, HOT carriers, QUANTUM dots, POTENTIAL well, SOLAR cells, TIME-resolved measurements, CHARGE carriers

15

Academic Journal

Enhancement of the anomalous Nernst effect in epitaxial Fe4N films grown on SrTiO3(001) substrates with oxygen deficient layers.

Authors: Ito, Keita, Wang, Jian, Shimada, Yusuke, Sharma, Himanshu, Mizuguchi, Masaki, Takanashi, Koki

Source: Journal of Applied Physics; 10/7/2022, Vol. 132 Issue 13, p1-7, 7p

Subject Terms: NERNST effect, SEEBECK coefficient, MOLECULAR beam epitaxy, FERROMAGNETIC materials, OXYGEN

Geographic Terms: SCHWABISCH Hall (Germany)

People: MAO, Zedong, 1893-1976

16

Academic Journal

Coherently strained (001) β-(AlxGa1−x)2O3 thin films on β-Ga2O3: Growth and compositional analysis.

Authors: Mauze, Akhil, Itoh, Takeki, Zhang, Yuewei, Deagueros, Evelyn, Wu, Feng, Speck, James S.

Source: Journal of Applied Physics; 9/21/2022, Vol. 132 Issue 11, p1-8, 8p

Subject Terms: THIN films, ATOM-probe tomography, MONOMOLECULAR films, MOLECULAR beam epitaxy, TRANSMISSION electron microscopy, METALLIC oxides

17

Academic Journal

Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy.

Authors: Brito, Daniel, Pérez-Rodriguez, Ana, Khatri, Ishwor, Tavares, Carlos José, Amado, Mario, Castro, Eduardo, Diez, Enrique, Sadewasser, Sascha, Claro, Marcel S.

Source: Journal of Applied Physics; 9/21/2022, Vol. 132 Issue 11, p1-10, 10p

Subject Terms: MOLECULAR beam epitaxy, TOPOLOGICAL insulators, TOPOLOGICAL property, SEMIMETALS, CARRIER density, MAGNETORESISTANCE, SURFACE states

18

Academic Journal

Direct bandgap dependence of bismuth films on their thickness.

Authors: Nevinskas, I., Stanionytė, S., Devenson, J., Krotkus, A.

Source: Journal of Applied Physics; 8/7/2022, Vol. 132 Issue 5, p1-6, 6p

Subject Terms: SUBMILLIMETER waves, MOLECULAR beam epitaxy, BISMUTH, ELECTRON scattering, TERAHERTZ spectroscopy, THIN films, ENERGY bands, FEMTOSECOND pulses

19

Academic Journal

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence.

Authors: Damilano, B., Vézian, S., Chauvat, M. P., Ruterana, P., Amador-Mendez, N., Collin, S., Tchernycheva, M., Valvin, P., Gil, B.

Source: Journal of Applied Physics; 7/21/2022, Vol. 132 Issue 3, p1-8, 8p

Subject Terms: QUANTUM wells, INDIUM gallium nitride, MOLECULAR beam epitaxy, GALLIUM nitride, PHOTOLUMINESCENCE, TRANSMISSION electron microscopy, BUFFER layers

20

Academic Journal

Current-induced magnetization switching in epitaxial L10-FePt/Cr heterostructures through orbital Hall effect.

Authors: Lyu, H. C., Zhao, Y. C., Qi, J., Yang, G., Qin, W. D., Shao, B. K., Zhang, Y., Hu, C. Q., Wang, K., Zhang, Q. Q., Zhang, J. Y., Zhu, T., Long, Y. W., Wei, H. X., Shen, B. G., Wang, S. G.

Source: Journal of Applied Physics; 7/7/2022, Vol. 132 Issue 1, p1-8, 8p

Subject Terms: HALL effect, HETEROSTRUCTURES, PERPENDICULAR magnetic anisotropy, MOLECULAR beam epitaxy, MAGNETIZATION, SPIN-orbit coupling, MAGNETIC anisotropy

Geographic Terms: SCHWABISCH Hall (Germany)

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