Authors: Wang, Zhixiu, Yi, Wencai, Cao, Yiqing, Miao, Maosheng, Liu, Jingyao

Source: Journal of Chemical Physics; 11/21/2023, Vol. 159 Issue 19, p1-10, 10p

Subject Terms: TWO-dimensional electron gas, ELECTRON gas, GALLIUM nitride, HETEROSTRUCTURES, GENERATIVE adversarial networks, HEAT of formation

Authors: Singh, Kamal, Kumar, Parmod, Rathi, Vaishali, Kumar, Tanuj, Pandey, Ratnesh K., Kanjilal, D., Brajpuriya, Ranjeet K., Kumar, Ashish

Source: Journal of Applied Physics; 10/28/2023, Vol. 134 Issue 16, p1-7, 7p

Subject Terms: EPITAXIAL layers, SCHOTTKY barrier diodes, IRRADIATION, HEAVY ions, GALLIUM nitride, SCHOTTKY barrier

Authors: Liu, Yang, Fu, Chen, Jiang, Guangyuan, Zhang, Guangyuan, Yang, Guang, Lv, Yuanjie, Lin, Zhaojun

Source: Journal of Applied Physics; 10/28/2023, Vol. 134 Issue 16, p1-8, 8p

Subject Terms: FIELD-effect transistors, GALLIUM nitride, PHONON scattering, ELECTRON mobility

Authors: Zoino, S., Borowik, Ł., Mohamad, B., Nowak, E., Kempisty, P.

Source: Journal of Applied Physics; 10/21/2023, Vol. 134 Issue 15, p1-7, 7p

Subject Terms: METAL oxide semiconductor field-effect transistors, CARRIER gas, TWO-dimensional electron gas, GALLIUM nitride, HETEROSTRUCTURES, ALUMINUM oxide

Authors: Tsormpatzoglou, A., Oproglidis, T. A., Pappas, I., Dimitriadis, C. A.

Source: Journal of Applied Physics; 10/21/2023, Vol. 134 Issue 15, p1-8, 8p

Subject Terms: DIODES, THERMAL resistance, CURRENT-voltage characteristics, INDIUM gallium nitride, DIFFUSION coefficients, QUANTUM wells, MODEL validation

Authors: Ji, Yihong, Frentrup, Martin, Zhang, Xiaotian, Pongrácz, Jakub, Fairclough, Simon M., Liu, Yingjun, Zhu, Tongtong, Oliver, Rachel A.

Source: Journal of Applied Physics; 10/14/2023, Vol. 134 Issue 14, p1-10, 10p

Subject Terms: INDIUM gallium nitride, LATTICE constants, TRANSMISSION electron microscopy, NUCLEAR forces (Physics), QUANTUM wells

Authors: Shetty, Satish, Kuchuk, Andrian, Zamani-Alavijeh, Mohammad, Hassan, Ayesha, Eisner, Savannah R., Maia de Oliveira, Fernando, Krone, Alexis, Harris, John, Thompson, Josh P., Eldose, Nirosh M., Mazur, Yuriy I., Huitink, David, Senesky, Debbie G., Alan Mantooth, H., Salamo, Gregory J.

Source: Journal of Applied Physics; 10/14/2023, Vol. 134 Issue 14, p1-9, 9p

Subject Terms: GALLIUM nitride, TWO-dimensional electron gas, MAGNETIC sensors, THERMAL stability, MAGNETIC fields, OHMIC contacts, GALLIUM alloys

Authors: Narang, Kapil, Bag, Rajesh K., Pandey, Akhilesh, Goyal, Anshu, Singh, Vikash K., Lohani, Jaya, Yadav, Brajesh S., Saini, Sachin, Bharti, Preeti, Dalal, Sandeep, Padmavati, M. V. G., Tyagi, Renu, Singh, Rajendra

Source: Journal of Applied Physics; 10/14/2023, Vol. 134 Issue 14, p1-12, 12p

Subject Terms: GALLIUM nitride, TWO-dimensional electron gas, ELECTRON gas, INTERFACIAL roughness, SURFACE morphology, MODULATION-doped field-effect transistors

Authors: Xue, Junjun, Chen, Wei, Tao, Tao, Zhi, Ting, Shao, Pengfei, Cai, Qing, Yang, Guofeng, Wang, Jin, Chen, Dunjun, Zhang, Rong

Source: Journal of Applied Physics; 10/14/2023, Vol. 134 Issue 14, p1-9, 9p

Subject Terms: SPIN valves, GALLIUM nitride, HETEROSTRUCTURES, FERROMAGNETIC materials, DENSITY of states

Authors: Marcinkevičius, Saulius, Chow, Yi Chao, Nakamura, Shuji, Speck, James S.

Source: Journal of Applied Physics; 8/28/2023, Vol. 134 Issue 8, p1-7, 7p

Subject Terms: GALLIUM nitride, PHOTOLUMINESCENCE measurement, POTENTIAL barrier, LOW temperatures, TIME-resolved measurements, INDIUM gallium nitride

Authors: Azimi, Alireza, Azimi, Mohammadreza, Shur, Michael S., O'Leary, Stephen K.

Source: Journal of Applied Physics; 9/28/2023, Vol. 134 Issue 12, p1-7, 7p

Subject Terms: ELECTRON transport, TWO-dimensional electron gas, GALLIUM nitride, ELECTRONS, PHYSICAL mobility, SPACE charge

Authors: Liu, Yutao, Gao, Tinghong

Source: Journal of Chemical Physics; 9/7/2023, Vol. 159 Issue 9, p1-9, 9p

Subject Terms: GALLIUM nitride, SCHOTTKY barrier, ISOTROPIC properties, ELECTRONIC equipment, ELECTRIC fields, ELECTRONIC structure, OHMIC contacts

Authors: Sakurai, Yuki, Usami, Shigeyoshi, Imanishi, Masayuki, Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Maruyama, Mihoko, Yoshimura, Masashi, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke

Source: Journal of Applied Physics; 8/28/2023, Vol. 134 Issue 8, p1-8, 8p

Subject Terms: SUPERSATURATION, PARTIAL pressure, GALLIUM nitride, EPITAXY, VAPORS, STATISTICAL correlation

Authors: Sanyal, Indraneel, Chen, Yu-Chih, Yu, Chuan-Yue, Chyi, Jen-Inn

Source: Journal of Applied Physics; 8/28/2023, Vol. 134 Issue 8, p1-8, 8p

Subject Terms: PHONON scattering, ELECTRON gas, MODULATION-doped field-effect transistors, TWO-dimensional electron gas, GALLIUM nitride, HETEROSTRUCTURES, ELECTRON scattering

Authors: Baron, Elias, Goldhahn, Rüdiger, Espinoza, Shirly, Zahradník, Martin, Rebarz, Mateusz, Andreasson, Jakob, Deppe, Michael, As, Donat J., Feneberg, Martin

Source: Journal of Applied Physics; 8/21/2023, Vol. 134 Issue 7, p1-7, 7p

Subject Terms: TEMPERATURE effect, GALLIUM nitride, ELLIPSOMETRY, CONDUCTION bands, DIELECTRIC function, ION recombination

Authors: Baron, Elias, Goldhahn, Rüdiger, Espinoza, Shirly, Zahradník, Martin, Rebarz, Mateusz, Andreasson, Jakob, Deppe, Michael, As, Donat J., Feneberg, Martin

Source: Journal of Applied Physics; 8/21/2023, Vol. 134 Issue 7, p1-10, 10p

Subject Terms: DIELECTRIC function, ELLIPSOMETRY, CONDUCTION bands, VALENCE bands, GALLIUM nitride, OXYGEN carriers, CARRIER density

Authors: Chittock, Nicholas J., Shu, Yi, Elliott, Simon D., Knoops, Harm C. M., Kessels, W. M. M.., Mackus, Adriaan J. M.

Source: Journal of Applied Physics; 8/21/2023, Vol. 134 Issue 7, p1-13, 13p

Subject Terms: POWER semiconductors, GALLIUM nitride, LIGHT emitting diodes, ETCHING, SEMICONDUCTOR devices, SURFACE cleaning

Authors: Xue, Haotian, Palmese, Elia, Song, Renbo, Chowdhury, Md Istiaque, Strandwitz, Nicholas C., Wierer Jr., Jonathan J.

Source: Journal of Applied Physics; 8/21/2023, Vol. 134 Issue 7, p1-8, 8p

Subject Terms: THIN films, GALLIUM nitride, CHEMICAL vapor deposition, ATOMIC force microscopy, OPTICAL properties

Authors: Li, Xiaolin, Liu, Xu, Li, Hang, Lü, Ying-Qi, Gao, Cunxu

Source: Journal of Applied Physics; 8/14/2023, Vol. 134 Issue 6, p1-6, 6p

Subject Terms: THIN films, COPPER films, EPITAXY, COPPER, TRANSPORT theory, MAGNETIC properties, GALLIUM nitride films

Authors: Nishiguchi, Kenya, Nakata, Ken, Nishiguchi, Norihiko, Hashizume, Tamotsu

Source: Journal of Applied Physics; 8/7/2023, Vol. 134 Issue 5, p1-9, 9p

Subject Terms: GALLIUM nitride, SURFACE potential